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企业级内存条

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商用级内存条

内存条

SeriesDDR4  With Heatsink UDIMM Series(H41 Series)
Capacity4GB
Model NumberH41 DDR4-PC-4GB
EAN693551510602969355151060126935515106005
Memory Speed / Frequency2400MHz2666MHz3200MHz
Memory Bandwidth (GB/s)192002130021300
Rank (1Rx8/2Rx8/8Rx4)1Rx81Rx82Rx8
CAS LatencyCL15-15-15-35CL19-19-19-43CL22-22-22-52
Capacity8GB
Model NumberH41 DDR4-PC-8GB
EAN69355151059926935515105978　
Memory Speed / Frequency2400MHz3200MHz　
Memory Bandwidth (GB/s)2130021300　
Rank (1Rx8/2Rx8/8Rx4)2Rx8　　
CAS LatencyCL19-19-19-43CL22-22-22-52　
Capacity16GB
Model NumberH41 DDR4-PC-16GB
EAN69355151059546935515105947　
Memory Speed / Frequency2666MHz3200MHz　
CAS LatencyCL19-19-19-43CL22-22-22-52　
Capacity32GB
Model NumberH41 DDR4-PC-32GB
EAN69355151059236935515105916　
Memory Speed / Frequency2666MHz3200MHz　
CAS LatencyCL19-19-19-43CL22-22-22-52　
Operating Voltage1.2V
No. of  Memory IC4//8//16
Power Consumption3W
Controller ICNO
Overclock Support (YES / NO)NO
ECC (Error Correction Code) (YES/NO)NO
Net Weight (g)36g
Gross Weight (g)72g
Pin Count288
OEM/ODM SupportYES
Heat Sink / Heat SpreaderYES
Form FactorUDIMM
Computer Memory Type (DRAM/SDRAM)DRAM
Operating Temperature0-85℃
Storage Temperature-40~100℃
Warranty3 Years
No. of Memory Channels (Single/Dual)(Single/Dual)
Product Dimension (W x D x H) in mm138X53X6mm
Buffered / Un-buffered MemoryUn-buffered Memory
Memory IC BrandMicron/Samsung/Sk Hynix
SeriesDDR4 RGB With Heatsink UDIMM Series(RH41  Series)
Capacity8GB
Model NumberRH41 DDR4-PC-8GB
EAN69355151059096935515105893693551510588669355151058796935515105862
Memory Speed / Frequency2666MHz3000MHz3200MHz3600MHz4200MHz
Memory Bandwidth (GB/s)2130021300213002130021300
Rank (1Rx8/2Rx8/8Rx4)1Rx81Rx82Rx8　　
CAS LatencyCL19-19-19-43CL22-22-22-52CL22-22-22-52CL18-22-22-42CL19-25-25-45
Operating Voltage1.2V1.2V1.2V1.35V1.35V
Capacity16GB
Model NumberRH41  DDR4-PC-16GB
EAN69355151058556935515105848693551510583169355151058246935515105817
Memory Speed / Frequency2666MHz3000MHz3200MHz3600MHz4200MHz
Memory Bandwidth (GB/s)2130021300213002130021300
Rank (1Rx8/2Rx8/8Rx4)　　　　　
CAS LatencyCL19-19-19-43CL22-22-22-52CL22-22-22-52CL18-22-22-42CL19-25-25-45
Operating Voltage1.2V1.2V1.2V1.35V1.35V
Capacity32GB
Model NumberRH41  DDR4-PC-32GB
EAN69355151058006935515105794693551510578769355151057706935515105763
Memory Speed / Frequency2666MHz3000MHz3200MHz3600MHz4200MHz
Memory Bandwidth (GB/s)2130021300213002130021300
Rank (1Rx8/2Rx8/8Rx4)　　　　　
CAS LatencyCL19-19-19-43CL22-22-22-52CL22-22-22-52CL18-22-22-42CL19-25-25-45
Operating Voltage1.2V1.2V1.2V1.35V1.35V
No. of  Memory IC4//8//16
Power Consumption3W
Controller ICNO
Overclock Support (YES / NO)NO
ECC (Error Correction Code) (YES/NO)NO
Net Weight (g)44g
Gross Weight (g)80g
Pin Count288
OEM/ODM SupportYES
Heat Sink / Heat SpreaderYES
RGB lightsYES
Form FactorUDIMM
Computer Memory Type (DRAM/SDRAM)DRAM
Operating Temperature0-85℃
Storage Temperature-40~100℃
Warranty3 Years
No. of Memory Channels (Single/Dual)(Single/Dual)
Product Dimension (W x D x H) in mm138x53x6mm
Buffered / Un-buffered MemoryUn-buffered Memory
Memory IC BrandMicron/Samsung/Sk Hynix
SeriesDDR4 SODIMM Series
Capacity4GB
Model NumberDDR4-NB-4GB　　
EAN69355151342686935515135982　
Memory Speed / Frequency2400MHz2666MHz　
Memory Bandwidth (GB/s)1920021300　
Rank (1Rx8/2Rx8/8Rx4)1Rx81Rx8　
CAS LatencyCL15-15-15-35CL19-19-19-43　
Capacity8GB
Model NumberDDR4-NB-8GB
EAN693551513427569355151342826935515135999
Memory Speed / Frequency2400MHz2666MHz3200MHz
Memory Bandwidth (GB/s)2130021300　
Rank (1Rx8/2Rx8/8Rx4)2Rx82Rx8　
CAS LatencyCL15-15-15-35CL19-19-19-43CL22-22-22-52
Capacity16GB
Model NumberDDR4-NB-16GB
EAN69355151342996935515136002　
Memory Speed / Frequency2666MHz3200MHz　
CAS LatencyCL19-19-19-43CL22-22-22-52　
Capacity32GB
Model NumberDDR4-NB-32GB
EAN69355151021376935515102144　
Memory Speed / Frequency2666MHz3200MHz　
CAS LatencyCL19-19-19-43CL22-22-22-52　
Operating Voltage1.2V
No. of  Memory IC4//8//16
Power Consumption3W
Controller ICNO
Overclock Support (YES / NO)NO
ECC (Error Correction Code) (YES/NO)NO
Net Weight (g)10g
Gross Weight (g)25g
Pin Count260
OEM/ODM SupportYES
Heat Sink / Heat SpreaderNO
Form FactorSODIMM
Computer Memory Type (DRAM/SDRAM)DRAM
Operating Temperature0-70℃
Storage Temperature-40~85℃
Warranty3 Years
No. of  Memory Channels (Single/Dual)(Single/Dual)
Product Dimension (W x D x H) in mm70x30x3mm
Buffered / Un-buffered MemoryUn-buffered Memory
Memory IC BrandMicron/Samsung/Sk Hynix

产品线优势

01
资源型战略合作机制，拥有长期稳 定的DRAM资源
02
通过严格的EVT/DVT/PVT流程，搭 建严谨的产品测试验证体系
03
自主研发与设计的10nm级ASIC测 试系统，集速度测试、功能测试、 老化测试与一体，已实现量产量测 能力
04
自有测试基地和国内专业制造企业 并重的供应链体系，以完善的生产 制造管控体系打造高质量工艺路线
05
通过严格的验证和认证，被专业测 试机构评为优质品

产品特性

➊

标准DRAM存储技术架构，通过Bank Group技术实现8倍bit预取机制，动态模式提供最优的省电效能，电容最小存储单元提供理论无限次随机读写能力

➋

8~10层高密度线路板搭载，提供高速信号传输完整性保障机制（10层板架构设计）

➌

标准化兼容，支持所有DDR标准化接口，无需硬件调试，适配即可应用

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